Width effect on hot-carrier-induced degradation for 90 nm partially depleted SOI CMOSFETs

被引：0
|
作者：
Lai, Chieh-Ming [1 ]
Fang, Yean-Kuen [1 ]
Pan, Shing-Tai [2 ]
Yeh, Wen-Kuan [3 ]
机构：
[1] Institute of Microelectronics, National Cheng Kung University, No, 1 University Road, Tainan, 70101, Taiwan
[2] Department of Computer Science Information Engineering, Shu Te University, No. 59, Hun Shang Rd., Yen Chao, Kaohsiung 82442, Taiwan
[3] Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu Dist., Kaohsiung 811, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
13
引用
收藏
页码：2361 / 2365
相关论文
共 50 条
  • [21] HOT-CARRIER-INDUCED PHOTON-EMISSION IN THIN SOI MOSFETS
    KAWAMURA, S
    MAKINO, T
    SUKEGAWA, K
    IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (12) : 1471 - 1476
  • [22] Hot-carrier-induced degradation of LDD polysilicon TFTs
    Valletta, A
    Mariucci, L
    Fortunato, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (01) : 43 - 50
  • [23] Edge and floating body effects on hot-carrier-induced degradation in FD SOI n-MOSFETs
    Renn, SH
    Szelag, B
    Balestra, F
    Raynaud, C
    PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 276 - 281
  • [24] HOT-CARRIER-INDUCED DEGRADATION IN NITRIDED OXIDE MOSFETS
    GUPTA, A
    PRADHAN, S
    ROENKER, KP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) : 577 - 588
  • [25] A bidirectional DC model of hot-carrier-induced nMOSFET degradation
    Kasemsuwan, V
    Chaisirithavornkul, W
    Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3, 2003, : 265 - 268
  • [26] MEAN TIME TO FAILURE MODEL FOR HOT-CARRIER-INDUCED DEGRADATION
    CHEN, KL
    SALLER, SA
    GROVES, IA
    SCOTT, DB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1970 - 1971
  • [27] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS
    CHOI, JY
    KO, PK
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 333 - 335
  • [28] Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation
    Univ of Twente, Enschede, Netherlands
    Microelectron Reliab, 11-12 (1667-1670):
  • [29] A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor
    Liu, Siyang
    Sun, Weifeng
    Qian, Qinsong
    Wei, Jiaxing
    Fang, Jiong
    Li, Ting
    Zhang, Chi
    Shi, Longxing
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (02) : 298 - 312
  • [30] Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation
    Huh, Yoonjong
    Yang, Dooyoung
    l'Yee, Hyeokjae
    Sung, Yungkwon
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 833 - 837
12345