Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

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作者：
Univ of Twente, Enschede, Netherlands [1 ]
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来源：
Microelectron Reliab | / 11-12卷 / 1667-1670期
关键词：
Carrier concentration - CMOS integrated circuits - Electric variables measurement - Equivalent circuits - Hot carriers - Semiconductor device models - Stresses;
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摘要：
The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7 μm CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations (e.g. ΔID, Δgm etc.).
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