MOLECULAR DYNAMICS SIMULATION OF THE DAMAGE PRODUCTION IN Al (110) SURFACE WITH SLOW ARGON IONS.

被引：0

作者：

Valkealhti, S. ^{[1
]}

Nieminen, R.M. ^{[1
]}

机构：

[1] Univ of Jyvaskyla, Jyvaskyla, Finl, Univ of Jyvaskyla, Jyvaskyla, Finl

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B18卷 / 4-6期

关键词：

ALUMINUM AND ALLOYS - Radiation Damage - PHYSICS - Molecular;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have developed a molecular dynamics simulation program to gain more insight into the sputtering process, especially the damage produced by it. We have studied the sputtering of aluminum (110) surface with argon ions. The Morse pair potential was used for Al-Al interaction, the Lennard-Jones potential for Ar-Ar interaction and both the Moliere potential and the universal potential of Ziegler et al. for Ar-Al interaction. An electronic friction term proportional to the particle velocities was also used.

引用

页码：365 / 369

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