DECAY RATE OF TRANSIENT PHOTOCURRENTS IN SEMICONDUCTORS.

被引：0

作者：

Halpern, V. ^{[1
]}

机构：

[1] Bar-Ilan Univ, Dep of Physics,, Ramat-Gan, Isr, Bar-Ilan Univ, Dep of Physics, Ramat-Gan, Isr

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1985年 / 52卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[11] ICs AND SEMICONDUCTORS.
Cushman, Robert H.
EDN, 1982, 27 (14) : 44 - 54
[12] DISLOCATIONS IN SEMICONDUCTORS.
Weiss, B.L.
Microelectronics Journal, 1974, 5 (03) : 45 - 49
[13] Spin photocurrents in semiconductors
Tarasenko, S. A.
PHYSICS-USPEKHI, 2010, 53 (07) : 739 - 742
[14] ELECTRON IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS.
Singh, S.R.
Pal, B.B
Applied Physics A: Solids and Surfaces, 1987, A43 (02): : 105 - 109
[15] AN EXTENSION OF THE MULTIPLE-TRAPPING MODEL FOR TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SEMICONDUCTORS
ABRAHAM, M
HALPERN, V
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (04): : 523 - 529
[16] AMORPHOUS AND LIQUID SEMICONDUCTORS.
1973,
[17] PLASTIC ENCAPSULATION OF SEMICONDUCTORS.
Lawson, R.W.
Harrison, J.C.
Soviet Journal of Optical Technology (English translation of Optiko-Mekhanicheskaya Promyshlennost), 1974,
[18] PLASMA EXCITATIONS IN SEMICONDUCTORS.
Kukharskii, A.A.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (09): : 1165 - 1166
[19] CONTACTS AND INTERCONNECTIONS ON SEMICONDUCTORS.
Baglin, J.E.E.
Harrison, H.B.
Tandon, J.L.
Williams, J.S.
1984, : 357 - 409
[20] MATERIAL ASPECTS OF SEMICONDUCTORS.
Pogge, H.Bernhard
1985, (15)