DISLOCATIONS IN SEMICONDUCTORS.

被引：0

作者：

Weiss, B.L.

机构：

来源：

Microelectronics Journal | 1974年 / 5卷 / 03期

关键词：

SEMICONDUCTOR MATERIALS;

D O I：

暂无

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学科分类号：

摘要：

The effect of dislocations on the characteristics of semiconductor devices is discussed, particularly in conjunction with the current trend towards smaller devices. It is emphasized that the structure, properties and effects of dislocations are of great interest to all those concerned with semiconductor devices and their applications.

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页码：45 / 49

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[1] CHARGE CARRIER SCATTERING BY DISLOCATIONS IN SEMICONDUCTORS.
Podor, B.
Acta Technica (Budapest), 1975, 80 (1-2): : 231 - 236
[2] OPTICAL BEAM INDUCED CURRENT IMAGING OF DISLOCATIONS IN SEMICONDUCTORS.
Wilson, T.
McCabe, E.M.
Optik (Jena), 1986, 75 (01): : 11 - 15
[3] SEMICONDUCTORS.
BERESFORD, RODERIC
1982, V 55 (N 21): : 119 - 125
[4] SEMICONDUCTORS.
Frey, Jeffrey
Research and Development (Barrington, Illinois), 1984, 26 (06): : 254 - 260
[5] SPIN-DEPENDENT RECOMBINATION AND CONDUCTIVITY AS MEANS OF EXAMINING DISLOCATIONS IN SEMICONDUCTORS.
Kveder, V.V.
Osip'yan, Yu.A.
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1986, 51 (04): : 1 - 7
[6] ICs AND SEMICONDUCTORS.
Travis, Bill
1600, (27):
[7] ICs AND SEMICONDUCTORS.
Cushman, Robert H.
EDN, 1982, 27 (14) : 44 - 54
[8] AMORPHOUS AND LIQUID SEMICONDUCTORS.
1973,
[9] PLASTIC ENCAPSULATION OF SEMICONDUCTORS.
Lawson, R.W.
Harrison, J.C.
Soviet Journal of Optical Technology (English translation of Optiko-Mekhanicheskaya Promyshlennost), 1974,
[10] MATERIAL ASPECTS OF SEMICONDUCTORS.
Pogge, H.Bernhard
1985, (15)

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