Current-voltage characteristics of silicon on insulator metal oxide semiconductor field effect transistors in ballistic mode

被引：0

作者：

Natori, Kenji ^{[1
]}

机构：

[1] Univ of Tsukuba, Ibaraki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期

关键词：

Ballistic transport - Current voltage characteristics - Quantum transport;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：554 / 557

共 50 条

[1] CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BALLISTIC MODE
NATORI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 554 - 557
[2] THEORY OF STATIC CURRENT-VOLTAGE CHARACTERISTICS OF BALLISTIC METAL-INSULATOR SEMICONDUCTOR TRANSISTORS
SUKHANOV, AA
SANDOMIRSKII, VB
TKACH, YY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1378 - 1382
[3] AN INVESTIGATION OF ANOMALOUS CURRENT-VOLTAGE CHARACTERISTICS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
LIU, PS
LIU, GT
JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1410 - 1416
[4] Investigation of anomalous current-voltage characteristics in silicon-on-insulator metal-oxide-semiconductor transistors
Journal of Applied Physics, 1993, 74 (02):
[5] Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors
Yunus, M
Haque, A
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 600 - 604
[6] New current-voltage model for surrounding-gate metal-oxide-semiconductor field effect transistors
Chiang, TK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6446 - 6451
[7] New current-voltage model for surrounding-gate metal-oxide-semiconductor field effect transistors
Chiang, T.-K., 1600, Japan Society of Applied Physics (44):
[8] Current-voltage characteristics of AlN/GaN heterostructure metal insulator semiconductor diode
Imanaga, S
Nakamura, F
Kawai, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A): : 1194 - 1198
[9] Novel silicon on insulator metal oxide semiconductor field effect transistors with buried back gate
Oh, H
Choi, H
Sakaguchi, T
Shim, J
Kurino, H
Koyanagi, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2140 - 2144
[10] Effects of Transitional Layer of Gate Insulator on Recombination DC Current-Voltage Lineshape in Metal-Oxide-Semiconductor Transistors
Chen, Zuhui
Zhou, Xing
Zhu, Guojun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0914031 - 0914035

← 1 2 3 4 5 →