Long-wave edge of spectral sensitivity of high-voltage matrix photovoltaic cell with vertical p-n junctions

被引：0

作者：

Epifanov, M.S. ^{[1
]}

Zhuravleva, L.L. ^{[1
]}

Unishkov, V.A. ^{[1
]}

机构：

[1] All-Union Scientific Research Inst, of Current Sources, Russia

来源：

Applied Solar Energy (English translation of Geliotekhnika) | 1988年 / 24卷 / 06期

关键词：

Solar Radiation--Spectrum Analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

One of the advantages of matrix high-voltage photovoltaic (HPV) cells in comparison to planar PV cells is their increased sensitivity to the long-wave part of the spectrum of solar radiation. It is shown that the increase in the loss factor as a result of reflection and an increase in the width of the directional pattern leads to a shift in the long-wave edge of spectral sensitivity to the short-wave side. Theoretical dependences of the internal efficiency of absorption on the direction of radiation are compared to experimental values.

引用

页码：16 / 20

共 50 条

[21] High Voltage Vertical GaN p-n Diodes With Avalanche Capability
Kizilyalli, Isik C.
Edwards, Andrew P.
Nie, Hui
Disney, Don
Bour, Dave
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3067 - 3070
[22] High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings
P. A. Ivanov
I. V. Grekhov
N. D. Il’inskaya
T. P. Samsonova
A. S. Potapov
Semiconductors, 2009, 43 : 505 - 507
[23] LONG-WAVELENGTH EDGE OF THE PHOTOEFFECT AND RECOMBINATION RADIATION OF GAAS P-N JUNCTIONS
GUTKIN, AA
KOZLOV, MM
NASLEDOV, DN
SEDOV, VE
SOVIET PHYSICS-SOLID STATE, 1964, 5 (12): : 2654 - 2654
[24] INVESTIGATION OF THE ELECTRICAL FIELDS IN HIGH-VOLTAGE SILICON P+-N-N+ JUNCTIONS
GREKHOV, IV
KIREEV, OA
SHOROKHOVA, VS
RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (09): : 1904 - 1909
[25] LONG-WAVELENGTH EDGE OF THE SPECTRAL DEPENDENCE OF THE PHOTOCURRENT IN A P-N HETEROJUNCTION
KONSTANTINOV, OV
MEZRIN, OA
TROSHKOV, SI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (12): : 1299 - 1302
[26] Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices
Neelova O.V.
Polymer Science, Series D, 2018, 11 (2) : 159 - 164
[27] METHOD FOR DETERMINING POSITION OF MICROPLASMA IN HIGH-VOLTAGE P-N-JUNCTIONS
MAGDEN, IN
SAFONOV, VA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (01) : 255 - 256
[28] MULTISTEP FIELD PLATES FOR HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
FEILER, W
FALCK, E
GERLACH, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1514 - 1520
[29] PHOTOACOUSTIC AND OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS
FLOHR, T
HELBIG, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (10) : 1683 - 1686
[30] INVESTIGATION OF HIGH-VOLTAGE P-N JUNCTIONS IN GAAS AND ALXGA1-XAS BY RECORDING CURRENT INDUCED BY AN ELECTRON PROBE
ALFEROV, ZI
ANDREEV, VM
KOROLKOV, VI
STREMIN, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1113 - &

← 1 2 3 4 5 →