INVESTIGATION OF THE ELECTRICAL FIELDS IN HIGH-VOLTAGE SILICON P+-N-N+ JUNCTIONS

被引：0

作者：

GREKHOV, IV

KIREEV, OA

SHOROKHOVA, VS

机构：

来源：

RADIOTEKHNIKA I ELEKTRONIKA | 1979年 / 24卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1904 / 1909

页数：6

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[1] CONCENTRATION PROFILING FOR HIGH-VOLTAGE P+-N-N+ DIODES
SUNDERSINGH, VP
GHATOL, AA
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 54 (01) : 127 - 137
[2] INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF HIGH-VOLTAGE SILICON P-N-JUNCTIONS BY OPTICAL-SCANNING
VOLLE, VM
VORONKOV, VB
GREKHOV, IV
KOROBKOV, NN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 412 - 415
[3] CHARACTERISTICS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N-JUNCTIONS
KUZMIN, VA
KRYUKOVA, NN
KYUREGYAN, AS
SOROKIN, YG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 766 - 769
[4] DELAY OF MICROPLASMA BREAKDOWN IN HIGH-VOLTAGE P-N JUNCTIONS IN SILICON
AKIMOV, PV
GREKHOV, IV
SEREZHKI.YN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1802 - +
[5] DETERMINATION OF POSITIONS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N JUNCTIONS
GREKHOV, IV
KLYUCHNI.VN
SEREZHKI.YN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 828 - +
[6] HIGH-VOLTAGE PLANAR P-N JUNCTIONS
KAO, YC
WOLLEY, ED
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1409 - +
[7] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE LARGE AREA SILICON P-N-JUNCTIONS
AKIMOV, PV
GREKHOV, IV
SEREZHKIN, YN
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 373 - 380
[8] INFRARED OBSERVATION OF BREAKDOWN BEHAVIOR OF HIGH-VOLTAGE P-N-JUNCTIONS AND P-N-P STRUCTURES IN SILICON
VOSS, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 299 - 303
[9] PLANAR TERMINATION FOR HIGH-VOLTAGE P-N-JUNCTIONS
GEORGESCU, S
DUNCA, T
SDRULLA, D
GHITA, I
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1035 - 1039
[10] BREAKDOWN OF SILICON P+-N-N+ DIODES
KONAKOVA, RV
MELNIKOVA, YS
MOZDOR, EV
FAINBERG, VI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1109 - 1112

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