INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF HIGH-VOLTAGE SILICON P-N-JUNCTIONS BY OPTICAL-SCANNING

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作者：
VOLLE, VM
VORONKOV, VB
GREKHOV, IV
KOROBKOV, NN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：412 / 415
页数：4
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