High rate deposition of silicon dioxide membrane by excimer laser enhanced projection chemical vapor deposition from organic compounds at low temperature

被引：0

作者：

Tomoura, Seiichirou ^{[1
]}

TAKASHIMA, Kouji ^{[1
]}

MINAMI, Kazuyuki ^{[1
]}

ESASHI, Masaki ^{[1
]}

NISHIZAWA, Jun-ichi ^{[1
]}

机构：

[1] Asahi Chemical Industry Co., Ltd, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 6 B期

关键词：

Chemical vapor deposition - Excimer lasers - Laser applications - Membranes - Organic compounds - Organometallics - Silicon dioxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel method of high-rate deposition of silicon dioxide from organic compounds at low temperature was studied. The new method is called light projection chemical vapor deposition (CVD) utilizing an ArF excimer beam. Tetramethylorthosilicate (TMOS) and hexamethyldisilazane (HMDS) are suitable source materials. This method enables the deposition of fine SiO2 patterns without subsequent photolithography. High deposition rates of about 3500 A/min from TMOS and about 2000 A/min from HMDS were obtained at 2°C.

引用

页码：3109 / 3112

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