Low frequency noise measurements of p-channel Si1-xGex MOSFET's

被引:0
|
作者
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom [1 ]
机构
来源
IEEE Trans. Electron Devices | / 7卷 / 1484-1486期
关键词
Number:; -; Acronym:; EPSRC; Sponsor: Engineering and Physical Sciences Research Council;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Noise behaviour of δp+ Si1-xGex layer SELBOX TFET
    Ghosh, P.
    Bhowmick, B.
    INDIAN JOURNAL OF PHYSICS, 2020, 94 (04) : 493 - 500
  • [22] Design of Si and SiGe p-channel SOI MOSFET
    Persun, M
    Pejcinovic, B
    Zhou, S
    SOLID-STATE ELECTRONICS, 1997, 41 (05) : 761 - 769
  • [23] An improved strained-Si on Si1-xGex MOSFET mobility model
    Zhao, Y
    Zhang, DW
    Tian, LL
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 1216 - 1219
  • [24] Designing nanometre silicon-on-insulator MOSFET with buried Si1-xGex quantum well channel
    Fu, Y
    Patel, CJ
    Willander, M
    PHYSICA E, 2001, 9 (04): : 694 - 700
  • [25] Impacts of Diameter and Ge content Variation on the Performance of Si1-xGex p-Channel Gate-All-Around Nanowire Transistors
    Zhang, Xianle
    Liu, Xiaoyan
    Yin, Longxiang
    Du, Gang
    2017 SILICON NANOELECTRONICS WORKSHOP (SNW), 2017, : 37 - 38
  • [26] Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
    Roldán, JB
    Gámiz, F
    López-Villanueva, JA
    Cartujo, P
    Godoy, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) : 2447 - 2449
  • [27] Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex p-Channel Gate-All-Around Nanowire Transistors
    Zhang, Xianle
    Liu, Xiaoyan
    Yin, Longxiang
    Du, Gang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 17 (01) : 108 - 112
  • [28] Low-Frequency Noise Study of p-Channel Bulk MuGFETs
    Simoen, E.
    Aoulaiche, M.
    Collaert, N.
    Claeys, C.
    MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011, 2011, 39 (01): : 53 - 60
  • [29] MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX/SI HETEROSTRUCTURES
    BELL, LD
    KAISER, WJ
    MANION, SJ
    MILLIKEN, AM
    PIKE, WT
    FATHAUER, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1602 - 1607
  • [30] 19GHz vertical Si p-channel MOSFET
    Moers, J
    Klaes, D
    Tönnesmann, A
    Vescan, L
    Wickenhäuser, S
    Marso, M
    Kordos, P
    Lüth, H
    ELECTRONICS LETTERS, 1999, 35 (03) : 239 - 240