A-type CrSi2 epitaxial films on Si(III): structure and electrical properties

被引：0
|
作者：
Galkin, N.G.
Velichko, T.V.
Skripka, S.V.
Khrustalev, A.B.
机构：
来源：
Mikroelektronika | / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：216 / 220
相关论文
共 50 条
  • [41] STRUCTURAL AND ELECTRICAL-PROPERTIES OF CRSI2 THIN-FILM RESISTORS
    HIEBER, K
    DITTMANN, R
    THIN SOLID FILMS, 1976, 36 (02) : 357 - 360
  • [42] Homogeneity domain and thermoelectric properties of CrSi2
    F. Yu. Solomkin
    V. K. Zaitsev
    S. V. Novikov
    Yu. A. Samunin
    G. N. Isachenko
    Technical Physics, 2013, 58 : 289 - 293
  • [43] Surface phases and epitaxy of Si on CrSi2(001)/Si(111)
    Plusnin, NI
    Galkin, NG
    Lifshits, VG
    Milenin, AP
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1999, 1-2 : 55 - 66
  • [44] Self-organization of CrSi2 nanoislands on Si(111) and growth of monocrystalline silicon with buried multilayers of CrSi2 nanocrystallites
    Galkin, Nickolay G.
    Goroshko, Dmitrii L.
    Dotsenko, Sergey A.
    Turchin, Taras V.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (02) : 557 - 563
  • [45] Formation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites
    Goroshko, Dmitry
    Chusovitin, Evgeniy
    Bezbabniy, Dmitry
    Dozsa, Laszlo
    Pecz, Bela
    Galkin, Nikolay
    ELECTRONIC MATERIALS LETTERS, 2015, 11 (03) : 424 - 428
  • [46] First-principles study on the electronic structure and optical properties of CrSi2
    ShiYun Zhou
    Quan Xie
    WanJun Yan
    Qian Chen
    Science in China Series G: Physics, Mechanics and Astronomy, 2009, 52 : 46 - 51
  • [47] First-principles study on the electronic structure and optical properties of CrSi2
    Zhou ShiYun
    Xie Quan
    Yan WanJun
    Chen Qian
    SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2009, 52 (01): : 46 - 51
  • [48] Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites
    Dmitry Goroshko
    Evgeniy Chusovitin
    Dmitry Bezbabniy
    Laszlo Dózsa
    Bela Pécz
    Nikolay Galkin
    Electronic Materials Letters, 2015, 11 : 424 - 428
  • [49] Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
    Menda, Ugur Deneb
    Ozdemir, Orhan
    Tatar, Beyhan
    Urgen, Mustafa
    Kutlu, Kubilay
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (04) : 257 - 266
  • [50] Structure and thermoelectric properties of CrSi2 crystallized from a tin solution—melt
    F. Yu. Solomkin
    V. K. Zaitsev
    N. F. Kartenko
    A. S. Kolosova
    A. T. Burkov
    O. N. Uryupin
    A. A. Shabaldin
    Technical Physics, 2010, 55 : 750 - 752
12345