Formation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites

被引：4

作者：

Goroshko, Dmitry ^{[1
,2
]}

Chusovitin, Evgeniy ^{[1
]}

Bezbabniy, Dmitry ^{[3
]}

Dozsa, Laszlo ^{[4
]}

Pecz, Bela ^{[4
]}

Galkin, Nikolay ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Vladivostok 690950, Russia

[3] Amur State Univ, Blagoveshchensk 675027, Russia

[4] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

ELECTRONIC MATERIALS LETTERS | 2015年 / 11卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

nanocomposite; self-organization; thermoelectric materials; compound semiconductors; heterostructures; CRSI2; SILICON; FILMS; TRANSPORT; DENSITY; SI(111); SURFACE; SI(001); PBTE;

D O I：

10.1007/s13391-015-4475-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three-layer heterostructures with embedded CrSi2 nanocrystallites were grown using molecular-beam epitaxy. The nanocrystallites have epitaxial orientation to the silicon lattice and are subjected to anisotropic compressive stress in the CrSi2 [001] direction. The thermoelectric power factor of the heterostructure is about 5 times higher than that in the substrate at 300 - 480K. Taking into consideration the ratio of nanocomposite and substrate thickness, the real power factor is expected to be 2 - 3 orders higher than the measured one and it reaches 3200 mu W K-2 m(-1) at 470 K.

引用

页码：424 / 428

页数：5

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