Structure and properties of CrSi2/Si multilayers

Structure and electrical properties of magnetron sputtered and subsequently annealed CrSi2/Si multilayers were investigated in dependence on the annealing temperature and the single layer thickness. Transmission electron microscopy proves the as-deposited layer stacks to consist of amorphous silicide and silicon layers. After annealing at temperatures from 450 to 650 degreesC the stacks consist of crystalline CrSi2 and amorphous Si layers. The layered structure is well developed and stable for annealing temperatures up to 650 degreesC and single layer thicknesses down to about 3 nm. For small single layer thicknesses the electrical properties of the stacks are essentially different from those of thin polycrystalline CrSi2 films. Analyzing Hall coefficient and conductivity measurements a decrease of the carrier mobility and a strong increase of the carrier density with decreasing single layer thickness have been observed. This behavior can be described by the influence of the CrSi2/Si interfaces on the electrical properties of the stacks. (C) 2004 Elsevier B.V. All rights reserved.