Growth condition dependence of GaN crystal structure on (0 0 1)GaAs by hydride vapor-phase epitaxy

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作者：
Tsuchiya, Harutoshi [1 ]
Sunaba, Kenji [1 ]
Suemasu, Takashi [1 ]
Hasegawa, Fumio [1 ]
机构：
[1] Univ of Tsukuba, Ibaraki, Japan
来源：
Journal of Crystal Growth | / 189-190卷
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Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
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页码：395 / 400
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