Non-contact photovoltage measurements in SiC

被引：0

作者：

Koshka, Y. ^{[1
]}

Mazzola, M.S. ^{[1
]}

机构：

[1] Mississippi State Univ, Mississippi State, United States

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Capacitance measurement - Electric conductance - Electrodes - Interfaces (materials) - Photovoltaic effects - Semiconductor doping - Semiconductor junctions - Ultraviolet radiation - Voltage measurement;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A non-contact ac photovoltage technique is reported for measuring capacitance and conductance of a buried junction in SiC. The photovoltage signal is generated by applying a chopped UV light source and is detected with a specially designed capacitive electrode. The values of junction capacitance and conductance are extracted from the real and the imaginary parts of the photovoltage. A new non-contact approach to perform C-V measurements of doping near the junction interface is suggested.

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