NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS MESFETS.

被引：0

作者：

Smith, F.W. ^{[1
]}

Calawa, A.R. ^{[1
]}

Chen, C.L. ^{[1
]}

Manfra, M.J. ^{[1
]}

Mahoney, L.J. ^{[1
]}

机构：

[1] MIT, Lexington, MA, USA, MIT, Lexington, MA, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期

关键词：

MOLECULAR BEAM EPITAXY - Applications - SEMICONDUCTING GALLIUM ARSENIDE - Growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Backgating from adjacent contact pads is a major source of crosstalk plaguing GaAs MESFET integrated circuits. The backgating is primarily caused by conduction in the buffer layer between the n-GaAs layer and the substrate. In circuits containing LEDs or lasers, crosstalk can also be caused through optical excitation. A buffer layer which is electrically insulating ( rho greater than 10**1**7 OMEGA -cm), completely optically inactive, and on which high-quality GaAs can be grown, has been grown by molecular-beam epitaxy (MBE). This layer, used in GaAs MESFET circuits, was found to eliminate both electrical and optical crosstalk and to improve device breakdown voltages significantly.

引用

共 50 条

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