HIGH POWER MICROWAVE STATIC INDUCTION TRANSISTOR.

被引：0
|
作者：
Kajiwara, Y.
Yukimoto, Y.
Shirahata, K.
机构：
来源：
| 1977年
关键词：
Microwave devices;
D O I：
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学科分类号：
摘要：
The paper discusses the design and fabrication of a new type of transistor called the ″Static Induction Transistor (SIT)″ . It is based on a short channel vertical J-FET structure and has been successfully verified as a promising device for microwave high power operation. The experimental transistors fabricated demonstrate the following features: (1) f(max) of above 5 GHz, (2) amplifying output power of 13 watts at 1 Ghz and (3) oscillating output power of 100 watts at 200 MHz. The text of this paper is in digest form.
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页码：281 / 284
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