PHYSICS OF THE MOS TRANSISTOR.

被引：0
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作者：
Brews, John R.
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来源：
Applied Solid State Science | 1981年 / pt A期
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D O I：
10.1016/b978-0-12-002954-9.50006-3
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摘要：
A summary is presented of the physics of MOS or MOSFET transistors made on a silicon substrate with emphasis on the long channel device, describing a simplified charge-sheet version of the Pao-Sah model and discussing threshold voltage determination from I-V curves together with the ion implantation effects on threshold and turn-on. Short channel effects are also discussed together with MOSFET minimization via scaling and via structural modification (HMOS, DMOS).
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