Hysteretic magnetoresistance in Nd1-xSrxMnO3 films with controlled carrier density
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作者:
Kasai, Masahiro
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机构:
Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, JapanJoint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
Kasai, Masahiro
[1
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Kuwahara, Hideki
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机构:
Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, JapanJoint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
Kuwahara, Hideki
[1
]
Moritomo, Yutaka
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Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, JapanJoint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
Moritomo, Yutaka
[1
]
Tomioka, Yasuhide
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Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, JapanJoint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
Tomioka, Yasuhide
[1
]
Tokura, Yoshinori
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Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, JapanJoint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
Tokura, Yoshinori
[1
]
机构:
[1] Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
来源:
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1996年
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JJAP, Minato-ku卷
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35期
关键词:
Experimental;
(EXP);
D O I:
10.1143/jjap.35.l489
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摘要:
Magnetotransport characteristics and their nominal hole concentration (x) dependence were investigated in Nd1-xSrxMnO3 films. Thermal hysteresis in resistivity indicating the occurrence of a first-order phase transition was observed for x = 0.35 and 0.50, but essentially not for x = 0.40 and 0.45. The x = 0.35 and 0.50 films also show hysteresis in magnetoresistance. Once the resistivity is decreased by an order of magnitude by application of a magnetic field, the low-resistivity state is maintained even after removal of the field below a critical temperature. Observed hysteretic behavior suggests the presence of instabilities which complete with double-exchange interaction in specific hole concentration regions, which may be one of the origins of the colossal magnetoresistance.
机构:
Indian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, India
Venkatesh, R.
Sethupathi, K.
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Indian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, India
Sethupathi, K.
Pattabiraman, M.
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Indian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, India
Pattabiraman, M.
Rangarajan, G.
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Indian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Low Temperature Lab, Madras 600036, Tamil Nadu, India
机构:
Department of Physics, National Institute of Technology, Kurukshetra-136119, India
National Physical Laboratory, New Delhi-110012, IndiaDepartment of Physics, National Institute of Technology, Kurukshetra-136119, India
Neelam Maikhuri
Vasudha Agarwal
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National Physical Laboratory, New Delhi-110012, IndiaDepartment of Physics, National Institute of Technology, Kurukshetra-136119, India
Vasudha Agarwal
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Anurag Gaur
H.K.Singh
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National Physical Laboratory, New Delhi-110012, IndiaDepartment of Physics, National Institute of Technology, Kurukshetra-136119, India