Hysteretic magnetoresistance in Nd1-xSrxMnO3 films with controlled carrier density

被引:0
|
作者
Kasai, Masahiro [1 ]
Kuwahara, Hideki [1 ]
Moritomo, Yutaka [1 ]
Tomioka, Yasuhide [1 ]
Tokura, Yoshinori [1 ]
机构
[1] Joint Research Cent for Atom, Technology (JRCAT), Tsukuba, Japan
来源
| 1996年 / JJAP, Minato-ku卷 / 35期
关键词
Experimental; (EXP);
D O I
10.1143/jjap.35.l489
中图分类号
学科分类号
摘要
Magnetotransport characteristics and their nominal hole concentration (x) dependence were investigated in Nd1-xSrxMnO3 films. Thermal hysteresis in resistivity indicating the occurrence of a first-order phase transition was observed for x = 0.35 and 0.50, but essentially not for x = 0.40 and 0.45. The x = 0.35 and 0.50 films also show hysteresis in magnetoresistance. Once the resistivity is decreased by an order of magnitude by application of a magnetic field, the low-resistivity state is maintained even after removal of the field below a critical temperature. Observed hysteretic behavior suggests the presence of instabilities which complete with double-exchange interaction in specific hole concentration regions, which may be one of the origins of the colossal magnetoresistance.
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