MONTE CARLO SIMULATION OF THE PHOTOELECTRON CROSSTALK IN SILICON IMAGING DEVICES.

被引:0
|
作者
Lavine, James P. [1 ]
Chang, Win-Chyi [1 ]
Anagnostopoulos, Constantine N. [1 ]
Burkey, Bruce C. [1 ]
Nelson, Edward T. [1 ]
机构
[1] Eastman Kodak Co, Rochester, NY, USA, Eastman Kodak Co, Rochester, NY, USA
来源
| 1600年 / CAD-4期
关键词
MATHEMATICAL STATISTICS - Monte Carlo Methods - SIGNAL INTERFERENCE - Crosstalk - SOLID STATE DEVICES;
D O I
暂无
中图分类号
学科分类号
摘要
The Monte Carlo method is used to evaluate the extent of crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers. 27 refs.
引用
收藏
相关论文
共 50 条
  • [21] Variance reduction for Monte Carlo simulation of semiconductor devices
    Yamada, Y
    System Simulation and Scientific Computing, Vols 1 and 2, Proceedings, 2005, : 1055 - 1059
  • [22] Estimation of crosstalk in LED fNIRS by photon propagation Monte Carlo simulation
    Iwano, Takayuki
    Umeyama, Shinji
    BIOPHOTONICS JAPAN 2015, 2015, 9792
  • [23] Monte Carlo simulation of electron transport in silicon carbide
    Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
    Gongneng Cailiao, 2007, 4 (542-545):
  • [24] Monte Carlo simulation of silicon nanowire thermal conductivity
    Chen, YF
    Li, DY
    Lukes, JR
    Majumdar, A
    JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2005, 127 (10): : 1129 - 1137
  • [25] Monte Carlo simulation of wet chemical etching of silicon
    van Veenendaal, E
    van Suchtelen, J
    van Beurden, P
    Cuppen, HM
    van Enckevort, WJP
    Nijdam, AJ
    Elwenspoek, M
    Vlieg, E
    SENSORS AND MATERIALS, 2001, 13 (06) : 343 - 350
  • [26] MONTE-CARLO SIMULATION OF CASCADE BRANCHING IN SILICON
    MAZZONE, AM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 18 (03): : 253 - 255
  • [27] Monte Carlo simulation of electron transport in doped silicon
    KaiblingerGrujin, G
    Kosina, H
    Selberherr, S
    HIGH PERFORMANCE COMPUTING ON THE INFORMATION SUPERHIGHWAY - HPC ASIA '97, PROCEEDINGS, 1997, : 444 - 449
  • [28] MONTE-CARLO SIMULATION OF GROWTH AND RECOVERY OF SILICON
    KERSULIS, S
    MITIN, V
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 34 - 37
  • [29] Monte Carlo simulation of thermal conductivities of silicon nanowires
    Chen, Yunfei
    Li, Deyu
    Lukes, Jennifer R.
    Ni, Zhonghua
    HT2005: PROCEEDINGS OF THE ASME SUMMER HEAT TRANSFER CONFERENCE 2005, VOL 1, 2005, : 397 - 402
  • [30] Monte-Carlo simulation of photoelectron transport in alkali antimonide photocathodes
    Pan, Dong
    Niu, Hanben
    Guangzi Xuebao/Acta Photonica Sinica, 1996, 25 (04):