共 50 条
- [21] SIMPLE STIMULUS ISOLATION UNIT USING A COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR SWITCH EXPERIENTIA, 1975, 31 (12): : 1474 - 1475
- [27] Improvement of metal-oxide semiconductor interface characteristics in complementary metal-oxide semiconductor on Si(111) by combination of fluorine implantation and long-time hydrogen annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7): : L108 - L110
- [28] Improvement of metal-oxide semiconductor interface characteristics in complementary metal-oxide semiconductor on Si(111) by combination of fluorine implantation and long-time hydrogen annealing Japanese Journal of Applied Physics, Part 2: Letters, 1600, 45 (4-7):
- [30] E-beam invasiveness on 65 nm complementary metal-oxide semiconductor circuitry JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):