Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

被引：0

作者：

Fujii, H. ^{[1
]}

Kanemaru, S. ^{[1
]}

Hiroshima, H. ^{[1
]}

Gorwadkar, S.M. ^{[1
]}

Matsukawa, T. ^{[1
]}

Itoh, J. ^{[1
]}

机构：

[1] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, Ibaraki, Japan

来源：

Applied Surface Science | 1999年 / 146卷 / 01期

关键词：

Electric potential - Electron beam lithography - Electron emission - Etching - Leakage currents - Silicon on insulator technology - Silicon wafers - Thermooxidation - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Si thin-film edge emitters with various gaps ranging from 15 nm to 55 nm were fabricated and characterized. Smooth, straight nanometer-scale gaps were made on a silicon-on-insulator wafer by using advanced microfabrication technology based on electron beam lithography, dry etching, and thermal oxidation. Electron emission occurred from voltage around 60 V and reached 100 nA at 70 V. The emission characteristics show no clear dependence on the gap distance. Measurements were also done in air to evaluate current leakage through nanogaps. Fabrication, structure, and emission characteristics are described in detail.

引用

页码：203 / 208

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