Growth of GaAs on high temperature hydrogen pretreated (100) Si substrates by molecular beam epitaxy

被引：0
|
作者：
Humphreys, T.P. [1 ]
Das, K. [1 ]
Posthill, J.B. [1 ]
Tarn, J.C.L. [1 ]
Jaing, B.L. [1 ]
Wortman, J.J. [1 ]
Parikh, N.R. [1 ]
机构：
[1] North Carolina State Univ, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 08期
关键词：
Interference Optical Microscopy - Rutherford Backscattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：1458 / 1463
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