Growth of GaAs on high temperature hydrogen pretreated (100) Si substrates by molecular beam epitaxy

被引：0
|
作者：
Humphreys, T.P. [1 ]
Das, K. [1 ]
Posthill, J.B. [1 ]
Tarn, J.C.L. [1 ]
Jaing, B.L. [1 ]
Wortman, J.J. [1 ]
Parikh, N.R. [1 ]
机构：
[1] North Carolina State Univ, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 08期
关键词：
Interference Optical Microscopy - Rutherford Backscattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：1458 / 1463
相关论文
共 50 条
  • [31] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF GAAS ON PATTERNED GAAS SUBSTRATES
    MARX, D
    ASAHI, H
    LIU, XF
    OKUNO, Y
    INOUE, K
    GONDA, S
    SHIMOMURA, S
    HIYAMIZU, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 204 - 209
  • [32] Molecular beam epitaxial growth of GaAs on Si(100). A variable growth temperature study
    Woolf, D.A., 1600,
  • [33] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
    VASQUEZ, RP
    LEWIS, BF
    GRUNTHANER, FJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
  • [34] GROWTH OF SI/GAAS SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
    GILLESPIE, HJ
    CROOK, GE
    MATYI, RJ
    APPLIED PHYSICS LETTERS, 1992, 60 (06) : 721 - 723
  • [35] Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy
    Chu, Chia-Pu
    Arafin, Shamsul
    Huang, Guan
    Nie, Tianxiao
    Wang, Kang L.
    Wang, Yong
    Zou, Jin
    Qasim, Syed M.
    BenSaleh, Mohammed S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02):
  • [36] GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    CRUMBAKER, TE
    LEE, HY
    HAFICH, MJ
    ROBINSON, GY
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 140 - 142
  • [37] LOW-TEMPERATURE GAAS GROWTH ON GAAS AND SI WITH METAL-ORGANIC MOLECULAR-BEAM EPITAXY ASSISTED BY HYDROGEN PLASMA
    SUEMUNE, I
    KUNITSUGU, Y
    TANAKA, Y
    KAN, Y
    YAMANISHI, M
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 329 - 334
  • [38] Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy
    Bastiman, Faebian
    Kuepers, Hanno
    Somaschini, Claudio
    Geelhaar, Lutz
    NANOTECHNOLOGY, 2016, 27 (09)
  • [39] LOW-TEMPERATURE CLEANING OF SI AND GROWTH OF GAAS ON SI BY HYDROGEN PLASMA-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY
    KUNITSUGU, Y
    SUEMUNE, I
    TANAKA, Y
    KAN, Y
    YAMANISHI, M
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 91 - 95
  • [40] Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates
    Wan, A
    Menon, V
    Forrest, SR
    Wasserman, D
    Lyon, SA
    Kahn, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 1893 - 1898
12345