DOPANT REDISTRIBUTION OF As-IMPLANTED SOI FILMS DURING RAPID THERMAL ANNEALING.

被引：0
|
作者：
Lin, Cheng-lu [1 ]
Tsou, Shih-chang [1 ]
机构：
[1] Shanghai Inst of Metallurgy, Shanghai, China, Shanghai Inst of Metallurgy, Shanghai, China
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING FILMS
引用
收藏
页码：627 / 628
相关论文
共 50 条
  • [1] DOPANT REDISTRIBUTION OF AS-IMPLANTED SOI FILMS DURING RAPID THERMAL ANNEALING
    LIN, CL
    TSOU, SC
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 627 - 628
  • [2] RAPID THERMAL ANNEALING OF AS-IMPLANTED SILICON
    HO, CC
    KWOR, R
    JONES, K
    ARAUJO, C
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C330 - C330
  • [3] DOPANT ACTIVATION AND HALL-MOBILITY IN B-IMPLANTED AND AS-IMPLANTED POLYSILICON FILMS AFTER RAPID OR CONVENTIONAL THERMAL ANNEALING
    JEANJEAN, P
    SELLITTO, P
    SICART, J
    ROBERT, JL
    CHAUSSEMY, G
    LAUGIER, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12) : 1130 - 1134
  • [4] RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED MONOCRYSTALLINE SILICON - DOPANT REDISTRIBUTION AND OUTDIFFUSION
    CHAUSSEMY, G
    GONTRAND, C
    KUMAR, SN
    CANUT, B
    BARBIER, D
    LAUGIER, A
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (01): : 103 - 114
  • [5] CRYSTALLIZATION OF AS-IMPLANTED LPCVD AMORPHOUS SI FILMS USING RAPID THERMAL ANNEALING
    ALVI, NS
    KWOR, R
    TANG, SM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C330 - C330
  • [6] 2-STEP RAPID THERMAL ANNEALING OF B-IMPLANTED AND AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS
    SICART, J
    JEANJEAN, P
    SELLITTO, P
    ROBERT, JL
    CHAUSSEMY, G
    LAUGIER, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 273 - 276
  • [7] DOPANT REDISTRIBUTION IN SILICON-ON-SAPPHIRE FILMS DURING THERMAL ANNEALING
    COWERN, NEB
    YALLUP, KJ
    GODFREY, DJ
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 704 - 706
  • [8] DOPANT REDISTRIBUTION IN SILICON-ON-SAPPHIRE FILMS DURING THERMAL ANNEALING
    COWERN, NEB
    [J]. GEC JOURNAL OF RESEARCH, 1987, 5 (01): : 49 - 57
  • [9] Rapid thermal annealing effects on blue luminescence of As-implanted GaN
    Huang, HY
    Xiao, JQ
    Ku, CS
    Chung, HM
    Chen, WK
    Chen, WH
    Lee, MC
    Lee, HY
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 4129 - 4131
  • [10] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON WAFERS DURING RAPID THERMAL ANNEALING.
    Uoochi, Yasuo
    Shioya, Yoshimi
    Maeda, Mamoru
    [J]. Journal of the Electrochemical Society, 1987, 134 (08) : 2007 - 2010
12345