DOPANT REDISTRIBUTION OF As-IMPLANTED SOI FILMS DURING RAPID THERMAL ANNEALING.

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作者：
Lin, Cheng-lu [1 ]
Tsou, Shih-chang [1 ]
机构：
[1] Shanghai Inst of Metallurgy, Shanghai, China, Shanghai Inst of Metallurgy, Shanghai, China
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期
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摘要：
SEMICONDUCTING FILMS
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页码：627 / 628
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