Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler

被引：0
|
作者：
Gu, Jianhui [1 ]
Zhou, Feng [1 ]
Xie, Wenjie [1 ]
Tam, Siu Chung [1 ]
Lam, Yee Loy [1 ]
机构：
[1] Photonics Laboratory, Div. Microlectron., Sch. Elec. E., Singapore, Singapore
来源：
Optics Communications | 1999年 / 165卷 / 04期
关键词：
Energy gap - Light absorption - Optical pumping - Photons - Q switching - Semiconducting gallium arsenide - Semiconductor lasers;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Passive Q-switching of a diode-pumped Nd:YAG laser is demonstrated using a GaAs wafer as saturable absorber as well as output coupler. Q-switched pulses with a pulse duration of 264 ns, pulse energy 91 μJ and pulse repetition rate 43 kHz were produced. The characteristics of this passive Q-switching method were studied.
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页码：245 / 249
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