Q-switching of diode-end-pumped Nd:YVO4 laser with GaAs output coupler

被引：0
|
作者：
Gu, JH [1 ]
Zhou, F [1 ]
Tam, SC [1 ]
Lam, YL [1 ]
Kam, CH [1 ]
Xie, WJ [1 ]
Lim, TK [1 ]
Wan, KT [1 ]
机构：
[1] Nanyang Technol Univ, Photon Lab, Div Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
PHOTONIC SYSTEMS AND APPLICATIONS IN DEFENSE AND MANUFACTURING | 1999年 / 3898卷
关键词：
solid-state lasers; diode pumping; Q-switching; GaAs; Fabry-Perot effect; and Nd : YVO4;
D O I：
10.1117/12.368473
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
To improve the compactness of Q-switched diode-pumped solid-state lasers, a passively Q-switched diode-end-pumped Nd:YVO4 laser was constructed using undoped and uncoated GaAs wafers as saturable absorbers as well as output couplers. GaAs wafers with two different thicknesses, 625 mu m and 500 mu m, were employed and their corresponding experimental results were compared. The results were also compared with those obtained with an active A-O Q-switch with similar cavity configuration and pumping condition. It is found that the Fabry-Perot effect of the GaAs wafer played an important role in shortening the Q-switched pulses and stabilizing the laser operation. The performance of passive Q-switching using the GaAs wafer with Fabry-Perot effect was better than that of both the passive GaAs Q-switching without Fabry-Perot effect and the active A-O Q-switching.
引用
收藏
页码：170 / 177
页数：8
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