Cross-sectional transmission electron microscopy observations and selected-area electron diffractions of interfaces of epitaxially grown diamond thin films on cubic boron nitride substrates

被引:0
|
作者
Tomikawa, Tadashi [1 ]
Shikata, Shin-ichi [1 ]
机构
[1] Sumitomo Electric Industries, Ltd, Hyogo, Japan
关键词
Diamond thin films - Heteroepitaxy - Lattice constants - Microwave plasma enhanced chemical vapor deposition - Selected area transmission electron diffraction (SATED) technique - Sintered polycrystalline cubic boron nitride substrates;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:3938 / 3942
相关论文
共 50 条
  • [1] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS AND SELECTED-AREA ELECTRON DIFFRACTIONS OF INTERFACES OF EPITAXIALLY GROWN DIAMOND THIN-FILMS ON CUBIC BORON-NITRIDE SUBSTRATES
    TOMIKAWA, T
    SHIKATA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A): : 3938 - 3942
  • [2] Cross-sectional transmission electron microscopy of thin graphite films grown by chemical vapor deposition
    Colby, Robert
    Yu, Qingkai
    Cao, Helin
    Pei, Steven S.
    Stach, Eric A.
    Chen, Yong P.
    DIAMOND AND RELATED MATERIALS, 2010, 19 (2-3) : 143 - 146
  • [3] Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride
    Aradi, E.
    Naidoo, S. R.
    Cummings, F.
    Motochi, I.
    Derry, T. E.
    DIAMOND AND RELATED MATERIALS, 2019, 92 : 168 - 173
  • [4] Surface microstructure analysis of cubic boron nitride films by transmission electron microscopy
    Meng, XM
    Zhang, WJ
    Chan, CY
    Lee, CS
    Bello, I
    Lee, ST
    APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
  • [5] Cross-sectional transmission electron microscope observation of Si clathrate thin films grown on Si (111) substrates
    Sakai, K.
    Takeshita, H.
    Haraguchi, T.
    Suzuki, H.
    Ohashi, F.
    Kume, T.
    Fukuyama, A.
    Nonomura, S.
    Ikari, T.
    THIN SOLID FILMS, 2017, 621 : 32 - 35
  • [6] Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films
    Chien, Chi-Hui
    Jian, Sheng-Rui
    Wang, Chung-Ting
    Juang, Jenh-Yih
    Huang, J. C.
    Lai, Yi-Shao
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (13) : 3985 - 3990
  • [7] A NOVEL TECHNIQUE FOR THE PREPARATION OF THIN-FILMS FOR CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
    HEUER, JP
    HOWITT, DG
    JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1990, 14 (01): : 79 - 82
  • [8] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF SILICON-SILICIDE INTERFACES
    FOLL, F
    HO, PS
    TU, KN
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 250 - 255
  • [9] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY FOR POLYCRYSTALLINE SILICON FILMS
    OPPOLZER, H
    FALCKENBERG, R
    DOERING, E
    JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 97 - 103
  • [10] THE PREPARATION OF CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY SPECIMENS OF NB/AL MULTILAYER THIN-FILMS ON SAPPHIRE SUBSTRATES
    BARMAK, K
    RUDMAN, DA
    FONER, S
    JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1990, 16 (03): : 249 - 253