Ellipsometric scatterometry for the metrology of sub-0.1-μm-linewidth structures

被引：0

作者：

Minhas, Babar K. ^{[1
]}

Coulombe, Stephen A. ^{[1
]}

Naqvi, S. Sohail H. ^{[1
,2
]}

McNeil, John R. ^{[1
]}

机构：

[1] Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131, United States

[2] GIK Inst. of Eng. Sci. and Technol., Pakistan

来源：

Applied Optics | 1998年 / 37卷 / 22期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：5112 / 5115

共 41 条

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Hitachi, Ltd, Tokyo, Japan
IEEE Trans Electron Devices, 1 (94-100):
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IEEE ELECTRON DEVICE LETTERS, 1999, 20 (10) : 538 - 540
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MEASUREMENT SCIENCE AND TECHNOLOGY, 2007, 18 (02) : 439 - 447
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1718 - 1724
[25] Experimental comparison between sub-0.1-μm ultrathin SOI single- and double-gate MOSFETs:: Performance and mobility
Widiez, Julie
Poiroux, Thierry
Vinet, Maud
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Deleonibus, Simon
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (06) : 643 - 648
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MICROELECTRONIC ENGINEERING, 1999, 45 (01) : 57 - 69
[27] Hot-carrier-induced abnormal gm degradation in sub-0.1-μm-channel nMOSFETs/SIMOX with LDD structure
Kansai Univ, Osaka, Japan
Microelectron Eng, 1 (57-69):
[28] Velocity overshoot greater than 107 cm/s at room temperature in sub-0.1-μm silicon-on-insulator devices
Appl Phys Lett, 1 (106):
[29] SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs
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Takagi, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1114 - 1120
[30] Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFET's by electrochemical etching
Xu, D
Enoki, T
Umeda, Y
Suemitsu, T
Yamane, Y
Ishii, Y
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) : 484 - 486

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