High performance p-i-n CdTe and CdZnTe detectors

被引：0
|
作者：
Petersburg Nuclear Physics Institute, 188350, Gatchina, St. Petersburg, Russia [1 ]
不详 [2 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect A | / 1卷 / 58-65期
关键词：
Number:; 9984/RBF; Acronym:; -; Sponsor: International Atomic Energy Agency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] VERY HIGH-RESOLUTION DETECTION OF GAMMA-RADIATION AT ROOM-TEMPERATURE USING P-I-N DETECTORS OF CDZNTE AND HGCDTE
    HAMILTON, WJ
    RHIGER, DR
    SEN, S
    KALISHER, MH
    JAMES, K
    REID, CP
    GERRISH, V
    BACCASH, CO
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) : 989 - 992
  • [32] High performance Ge p-i-n photodetectors on Si
    Michel, J
    Liu, JF
    Giziewicz, W
    Pan, D
    Wada, K
    Cannon, DD
    Jongthammanurak, S
    Danielson, DT
    Kimerling, LC
    Chen, J
    Ilday, FÖ
    Kärtner, FX
    Yasaitis, J
    2005 2nd IEEE International Conference on Group IV Photonics, 2005, : 177 - 179
  • [33] Characterization of CdTe/CdZnTe detectors
    Sato, G
    Takahashi, T
    Sugiho, M
    Kouda, M
    Mitani, T
    Nakazawa, K
    Okada, Y
    Watanabe, S
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) : 1258 - 1263
  • [34] Characterization of CdTe/CdZnTe detectors
    Sato, G
    Takahashi, T
    Sugiho, M
    Kouda, M
    Watanabe, S
    Okada, Y
    Mitani, T
    Nakazawa, K
    2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4, 2002, : 2299 - 2303
  • [35] Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes
    Lovergine, N.
    Traversa, M.
    Paiano, P.
    Farella, I.
    Prete, P.
    Cola, A.
    Quaranta, F.
    Mancini, A. M.
    NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 2007, 166 : 262 - 265
  • [36] P-i-N and Schottky P-i-N diamond diodes for high power limiters
    Surdi, Harshad
    Bressler, Mason
    Ahmad, Mohammad Faizan
    Koeck, Franz
    Winters, Bryce
    Goodnick, Stephen
    Thornton, Trevor
    Nemanich, Robert J.
    Chang, Josephine
    APPLIED PHYSICS LETTERS, 2024, 124 (06)
  • [37] P-I-N like behaviour of P+-N-N+ detectors under high fluence neutron irradiation
    Acciarri, M
    Croitoru, N
    Leroy, C
    Pensotti, S
    Rancoita, P
    Redaelli, M
    Seidman, A
    NUCLEAR PHYSICS B, 1995, : 480 - 487
  • [38] DEAD LAYERS AT SURFACE OF P-I-N DETECTORS - REVIEW
    DINGER, RJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) : 135 - 139
  • [39] Portable P-I-N CdZnTe Gamma-Ray Spectroscopy system
    Sudharsanan, R
    Stenstrom, C
    Vakerlis, G
    Pantazis, J
    Huber, A
    Redus, R
    Jordanov, VT
    SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 : 217 - 222
  • [40] ACOUSTOSTIMULATION PROCESSES IN SI(LI)-P-I-N DETECTORS
    GAIBOV, AG
    ZAVERYUKHIN, BN
    KREVCHIK, VD
    MUMINOV, RA
    NIGMANOV, O
    SHAMAGDIEV, AS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (10): : 616 - 620
12345