共 50 条
- [21] MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (08): : 1511 - 1516
- [22] E' and B2 center production in amorphous quartz by MeV Si and Au ion implantation MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 78 (01): : 32 - 38
- [23] Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 229 - 232
- [24] 2 MeV Si ion implantation damage in relaxed Si1-xGex NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 165 - 168
- [25] 2 MeV Si ion implantation damage in relaxed Si1-xGex Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 120 (1-4): : 165 - 168
- [26] MEV SI IMPLANTATION IN GAAS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 287 - 291
- [27] THE IMPLANTATION OF MEV ER INTO SI PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 195 - 200
- [28] CHANNELED-ION IMPLANTATION OF B-IONS AND P-IONS INTO SI FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1977, 13 (03): : 69 - 83
- [29] Influence of high doze ion implantation of B and P on the state of the Si(111) surface Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66 (08): : 1215 - 1219
- [30] Influence of high doze ion implantation of B and P on the state of the Si(111) surface IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (08): : 1215 - 1218