Damage production and annealing of ion implanted silicon carbide

被引：0
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作者：
Heft, A. [1 ]
Wendler, E. [1 ]
Heindl, J. [1 ]
Bachmann, T. [1 ]
Glaser, E. [1 ]
Strunk, H.P. [1 ]
Wesch, W. [1 ]
机构：
[1] Friedrich-Schiller-Universitaet Jena, Jena, Germany
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1996年 / 113卷 / 1-4期
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页码：239 / 243
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