Growth of SiC ingots with high rate

被引：0
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作者：
Dorozhkin, Sergei I. [1 ]
Avrov, Dmitri D. [1 ]
Rastegaev, Vladimir P. [1 ]
Tairov, Yuri M. [1 ]
机构：
[1] St. Petersburg Electrotechnical Univ, St. Petersburg, Russia
来源：
| 1997年 / Elsevier Science S.A., Lausanne, Switzerland卷 / B46期
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摘要：
12
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