Selective area growth by metal organic vapor phase epitaxy and atomic layer epitaxy using Ga2O3 as a novel mask layer

被引：0
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作者：
Hirose, Shingo [1 ]
Yoshida, Akihiro [1 ]
Yamaura, Masaaki [1 ]
Hara, Kazuhiko [1 ]
Munekata, Hiro [1 ]
机构：
[1] Mechanical Engineering Lab, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 3 A期
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页码：1516 / 1520
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