SOME ASPECTS OF THE TRANSPORT PHENOMENA NEAR THE MOBILITY EDGE IN DISORDERED SEMICONDUCTORS.

被引：0

作者：

Zvyagin, I.P. ^{[1
]}

机构：

[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR

来源：

Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期

关键词：

D O I：

暂无

中图分类号：

TM2 [电工材料]; TN [电子技术、通信技术];

学科分类号：

0805 ; 080502 ; 080801 ; 0809 ;

摘要：

The critical behavior of transport coefficients in the region near the mobility edge is discussed. It is shown that the temperature dependence of the thermopower and its variation with the Fermi level position can be used to evaluate the critical indices and the role of the correlation effects.

引用

页码：17 / 20

共 35 条

[31] TRANSPORT NEAR THE MOBILITY EDGE, THE SIGN OF THE HALL-EFFECT, PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INO-CHI
PASHMAKOV, B
CLAFLIN, B
FRITZSCHE, H
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 441 - 444
[32] Effect of local stress concentration near the rib edge on water and electron transport phenomena in polymer electrolyte fuel cell
Kanda, Daisuke
Watanabe, Hirotatsu
Okazaki, Ken
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2013, 67 : 659 - 665
[33] Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O
Fishchuk, Ivan I.
Kadashchuk, Andrey
Rolin, Cedric
Baessler, Heinz
Koehler, Anna
Heremans, Paul
Genoe, Jan
PHYSICAL REVIEW B, 2022, 105 (24)
[34] Non-linear optical effects and transport phenomena of magnetic semiconductors Pb1-xPrxTe near the semiconductor-metal phase transformation
Nouneh, K
Kityk, IV
Viennois, R
Benet, S
Plucinski, KJ
Charar, S
Golacki, Z
Paschen, S
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (07) : 965 - 973
[35] MECHANISM OF THE CHARGE CARRIER SCATTERING AND SOME PECULIARITIES OF TRANSPORT PHENOMENA IN HEAVILY DOPED MAGNETIC EUO1-DELTA, EU1-XGDXO AND EU1-XSMXO SEMICONDUCTORS
SAMOKHVALOV, AA
GIZHEVSKII, BA
SIMONOVA, ML
CHEBOTAEV, NM
FALKOVSKAYA, LD
FIZIKA TVERDOGO TELA, 1982, 24 (07): : 1931 - 1935

← 1 2 3 4 →