SOME ASPECTS OF THE TRANSPORT PHENOMENA NEAR THE MOBILITY EDGE IN DISORDERED SEMICONDUCTORS.

被引：0
|
作者：
Zvyagin, I.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR
来源：
Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
The critical behavior of transport coefficients in the region near the mobility edge is discussed. It is shown that the temperature dependence of the thermopower and its variation with the Fermi level position can be used to evaluate the critical indices and the role of the correlation effects.
引用
收藏
页码：17 / 20
相关论文
共 35 条
  • [21] Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors
    Kadashchuk, Andrey
    Tong, Fei
    Janneck, Robby
    Fishchuk, Ivan I.
    Mityashin, Alexander
    Pavlica, Egon
    Koehler, Anna
    Heremans, Paul
    Rolin, Cedric
    Bratina, Gvido
    Genoe, Jan
    PHYSICAL REVIEW B, 2017, 96 (12)
  • [22] MULTICHANNEL LANDAUER FORMULA FOR THERMOELECTRIC TRANSPORT WITH APPLICATION TO THERMOPOWER NEAR THE MOBILITY EDGE
    SIVAN, U
    IMRY, Y
    PHYSICAL REVIEW B, 1986, 33 (01): : 551 - 558
  • [23] LOW-TEMPERATURE ELECTRON TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS SILICON.
    Cloude, Carolyn
    Spear, W.E.
    Le Comber, P.G.
    Hourd, A.C.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 54 (04):
  • [24] LOW-TEMPERATURE ELECTRON-TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS-SILICON
    CLOUDE, C
    SPEAR, WE
    LECOMBER, PG
    HOURD, AC
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04): : L113 - L118
  • [25] Mechanistic aspects of energy transfer across nanometric structures boundaries, and interfaces: A near-field scanning optical microscopy study of nanocrystalline molecular semiconductors.
    Adams, DM
    Kerimo, J
    Zaban, A
    Gregg, BA
    Barbara, PF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 268 - PHYS
  • [26] NON-COMPACT SIGMA-MODELS AND THE EXISTENCE OF A MOBILITY EDGE IN DISORDERED ELECTRONIC SYSTEMS NEAR 2 DIMENSIONS
    HOUGHTON, A
    JEVICKI, A
    KENWAY, RD
    PRUISKEN, AMM
    PHYSICAL REVIEW LETTERS, 1980, 45 (05) : 394 - 397
  • [27] Group velocity and energy transport velocity near the band edge of a disordered coupled cavity waveguide: an analytical approach
    Le Thomas, N.
    Houdre, R.
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2010, 27 (10) : 2095 - 2101
  • [28] Transport phenomena in La0.8Ba0.2MnO3 single crystal:: evidence for activation to mobility edge
    Ustinov, VV
    Bebenin, NG
    Zainullina, RI
    Mashkautsan, VV
    Gaviko, VS
    Mukovskii, YM
    Shulyatev, DA
    Vassiliev, VG
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 226 : 911 - 913
  • [29] HIGH-T(C) SUPERCONDUCTORS - DISORDERED METALS WITH PAIRING VIA POLARIZABILITY FROM LOCALIZED STATES NEAR THE MOBILITY EDGE
    HEEGER, AJ
    YU, G
    PHYSICAL REVIEW B, 1993, 48 (09): : 6492 - 6498
  • [30] Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
    Fishchuk, I. I.
    Kadashchuk, A.
    Bhoolokam, A.
    de Meux, A. de Jamblinne
    Pourtois, G.
    Gavrilyuk, M. M.
    Kohler, A.
    Bassler, H.
    Heremans, P.
    Genoe, J.
    PHYSICAL REVIEW B, 2016, 93 (19)
1234