SOME ASPECTS OF THE TRANSPORT PHENOMENA NEAR THE MOBILITY EDGE IN DISORDERED SEMICONDUCTORS.

被引：0
|
作者：
Zvyagin, I.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, USSR, Moscow State Univ, Moscow, USSR
来源：
Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期
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D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
The critical behavior of transport coefficients in the region near the mobility edge is discussed. It is shown that the temperature dependence of the thermopower and its variation with the Fermi level position can be used to evaluate the critical indices and the role of the correlation effects.
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页码：17 / 20
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