共 50 条
- [21] SiGe NANOCRYSTAL FORMATION IN PECVD GROWN SiOX/Si/Ge/Si/SiOX MULTILAYERSPHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2009, : 77 - +Agan, S.Aydinli, A.
- [22] Formation of Ge, islands from a Ge layer on Si substrate during post-growth annealingAPPLIED SURFACE SCIENCE, 2007, 253 (06) : 3034 - 3040Kovacevic, I.Pivac, B.Dubcek, P.Zorc, H.Radic, N.Bernstorff, S.Campione, M.Sassella, A.
- [23] Structure and morphology of Ge nanowires on Si (001): Importance of the Ge islands on the growth direction and twin formationJOURNAL OF APPLIED PHYSICS, 2015, 117 (05)Boudaa, F.Blanchard, N. P.Descamps-Mandine, A.Benamrouche, A.Gendry, M.Penuelas, J.
- [24] THE EFFECT OF ION-IMPLANTATION AND SOLUTE ATOMS ON THE INTERDIFFUSION IN AMORPHOUS SI/GE MULTILAYERSJOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6430 - 6436PARK, BSPAEPEN, FPOATE, JMJACOBSON, DC
- [25] Strain relief via trench formation in Ge/Si(100) islandsAPPLIED PHYSICS LETTERS, 2000, 76 (24) : 3534 - 3536Chaparro, SAZhang, YDrucker, J
- [26] Fully coherent Ge islands growth on Si nano-pillars by selective epitaxyMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 70 : 30 - 37Yamamoto, YujiZaumseil, PeterSchubert, Markus AndreasCapellini, GiovanniSalvalaglio, MarcoMontalenti, F.Schroeder, ThomasTillack, Bernd
- [27] Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopySELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS, 2000, 583 : 137 - 142Liu, CPHenstrom, WLCahill, DGGibson, JM
- [28] FORMATION AND ANNEALING OF STRUCTURAL DEFECTS IN GE AND SI DURING ION BOMBARDMENTIZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1971, 35 (05): : 1080 - +ABROYAN, IABELYAKOV, VSTSEKHNOV.LA
- [29] Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge IslandsSEMICONDUCTORS, 2018, 52 (03) : 390 - 393Esin, M. Yu.Nikiforov, A. I.Timofeev, V. A.Tuktamyshev, A. R.Mashanov, V. I.Loshkarev, I. D.Deryabin, A. S.Pchelyakov, O. P.
