Structure and morphology of Ge nanowires on Si (001): Importance of the Ge islands on the growth direction and twin formation

被引：4
|
作者：
Boudaa, F. [1 ]
Blanchard, N. P. [2 ]
Descamps-Mandine, A. [1 ]
Benamrouche, A. [1 ]
Gendry, M. [1 ]
Penuelas, J. [1 ]
机构：
[1] Univ Lyon, Ecole Cent Lyon, INL, F-69134 Ecully, France
[2] Univ Lyon 1, CNRS, ILM, UMR5306, F-69622 Villeurbanne, France
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 05期
关键词：
MOLECULAR-BEAM EPITAXY; GERMANIUM NANOWIRES; MECHANISM; SILICON;
D O I：
10.1063/1.4907684
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Understanding and controlling the structural properties of Ge nanowires are important for their current and future use in technological applications. In this study, the initial stages of the heteroepitaxial growth of Ge nanowires on Si(001) via the Au catalyzed vapor-liquid-solid (VLS) method are investigated. We observe a Ge island located at the base of each nanowire. We propose that these islands are formed by the VLS mechanism and initiate the nanowire growth. Analysis of the islands morphology helps to explain the < 011 > growth direction commonly observed for Ge nanowires. Moreover, our observations provide an insight into the formation of twins that propagate along the growth direction. (C) 2015 AIP Publishing LLC.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Epitaxial growth of Ge islands on Si(001)
    MedeirosRibeiro, G
    Ohlberg, D
    Kamins, T
    Bratkovski, A
    Williams, RS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 34 - PHYS
  • [2] Morphology and photoluminescence of Ge islands grown on Si(001)
    Goryll, M
    Vescan, L
    Lüth, H
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 244 - 247
  • [3] Morphology and photoluminescence of Ge islands grown on Si(001)
    Goryll, M
    Vescan, L
    Lüth, H
    THIN SOLID FILMS, 1998, 336 (1-2) : 244 - 247
  • [4] Monolithic Growth of Ultrathin Ge Nanowires on Si(001)
    Zhang, J. J.
    Katsaros, G.
    Montalenti, F.
    Scopece, D.
    Rezaev, R. O.
    Mickel, C.
    Rellinghaus, B.
    Miglio, L.
    De Franceschi, S.
    Rastelli, A.
    Schmidt, O. G.
    PHYSICAL REVIEW LETTERS, 2012, 109 (08)
  • [5] Growth of Ge islands on prepatterned Si (001) substrates
    Zhong, ZY
    Halilovic, A
    Lichtenberger, H
    Schäffler, F
    Bauer, G
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4): : 243 - 247
  • [6] Optical characterization of the Ge/Si (001) islands in multilayer structure
    Huang, CJ
    Zuo, YH
    Li, C
    Li, DZ
    Cheng, BW
    Luo, LP
    Yu, JZ
    Wang, QM
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 202 - 208
  • [7] Intermixing in Ge/Si(001) islands: Elemental content and structure
    Eshed, A
    Zhu, J
    Yan, J
    Beserman, R
    Weiss, AH
    CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 45 - 50
  • [8] Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
    Wang, Jian-Huan
    Wang, Ting
    Zhang, Jian-Jun
    NANOMATERIALS, 2021, 11 (03) : 1 - 10
  • [9] Composition of Ge(Si) islands in the growth of Ge on Si(111)
    Ratto, F
    Rosei, F
    Locatelli, A
    Cherifi, S
    Fontana, S
    Heun, S
    Szkutnik, PD
    Sgarlata, A
    De Crescenzi, M
    Motta, N
    APPLIED PHYSICS LETTERS, 2004, 84 (22) : 4526 - 4528
  • [10] GROWTH OF GE THIN-FILMS AND ISLANDS ON THE SI(001) SURFACE
    KHOR, KE
    DASSARMA, S
    PHYSICAL REVIEW B, 1994, 49 (19): : 13657 - 13662
12345