Composition of Ge(Si) islands in the growth of Ge on Si(111)

被引：38
|
作者：
Ratto, F
Rosei, F
Locatelli, A
Cherifi, S
Fontana, S
Heun, S
Szkutnik, PD
Sgarlata, A
De Crescenzi, M
Motta, N
机构：
[1] Univ Quebec, INRS EMT, Varennes, PQ J3X 1S2, Canada
[2] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy
[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[4] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy
[5] Univ Rome Tre, Dipartimento Fis, I-00100 Rome, Italy
[6] Univ Rome Tre, Unita INFM, I-00100 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期
关键词：
D O I：
10.1063/1.1758304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460-560 degreesC. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%-20%, whereas it grows up to 30%-40% for "atoll-like" structures. The island's stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si. (C) 2004 American Institute of Physics.
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收藏
页码：4526 / 4528
页数：3
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