Effect of aluminum on Ac surface photovoltages in thermally oxidized n-type silicon wafers

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[1] Shimizu, Hirofumi
[2] Munakata, Chusuke
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Shimizu, Hirofumi | 1600年 / 31期
关键词：
Aluminum And Alloys - Semiconductor Devices - Surfaces - Electric Properties - Thermal Effects;
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摘要：
Ac surface photovoltage (SPV) appears in thermally oxidized n-type silicon wafers which are pre-treated with an aluminum (Al)-contaminated RCA solution (the concentration of Al in the oxide: 1017 atom/m2), indicating that Al acts as a negative charge. The negative charge vanishes with removal of the surface layer (-5 nm) of the oxide (approximately 61 nm) i.e., Al-induced charge resides in the surface layer of the thermally grown oxide.
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