COLLECTOR-UP HBT`S FABRICATED BY BE + AND O + ION IMPLANTATIONS.

被引：0

作者：

Adachi, Sadao ^{[1
]}

Ishibashi, Tadao ^{[1
]}

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

Electron device letters | 1986年 / EDL-7卷 / 01期

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D O I：

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摘要：

引用

页码：32 / 34

共 21 条

[1] COLLECTOR-UP HBTS FABRICATED BY BE+ AND O+ ION IMPLANTATIONS
ADACHI, S
ISHIBASHI, T
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 32 - 34
[2] Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's
Horio, Kazushige, 1897, IEEE, Piscataway, NJ, United States (42):
[3] A pure analytic method for direct extraction of collector-up HBT's small-signal parameters
Tseng, HC
Chou, JH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 1972 - 1977
[4] Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBT using Volterra series
Li, B
Prasad, S
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (09) : 1321 - 1323
[5] Characterization and modeling of bias-stressed InGaP/GaAs collector-up tunneling-collector HBTs fabricated with boron-ion implantation
Mochizuki, K
Tanaka, KI
Uchiyama, H
Ohta, H
Terano, A
Kikawa, T
Taniguchi, T
Mita, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2144 - 2149
[6] SMALL SIZE COLLECTOR-UP ALGAAS/GAAS HBTS FABRICATED USING H+ IMPLANTATION
HIROSE, T
INOUE, K
INADA, M
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 203 - 206
[7] An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters
Oudir, A.
Mahdouani, M.
Bourguiga, R.
Pardo, F.
Pelouard, J. L.
SOLID-STATE ELECTRONICS, 2008, 52 (11) : 1742 - 1750
[8] Small collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using H+ implantation
Hirose, Takashi, 1787, (30):
[9] Thermal performance of collector-up HBTs for small high-power amplifiers with a novel thermal via structure underneath the HBT fingers
Osone, Y
Mochizuki, K
Tanaka, K
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2005, 28 (01): : 34 - 38
[10] A COLLECTOR-UP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FABRICATED USING 3-STAGE MOCVD
KAWAI, H
KOBAYASHI, T
KANEKO, K
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 419 - 421

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