COLLECTOR-UP HBT`S FABRICATED BY BE + AND O + ION IMPLANTATIONS.

被引：0
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作者：
Adachi, Sadao [1 ]
Ishibashi, Tadao [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Electron device letters | 1986年 / EDL-7卷 / 01期
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摘要：
6
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页码：32 / 34
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