共 25 条
- [3] COLLECTOR-UP HBT`S FABRICATED BY BE + AND O + ION IMPLANTATIONS. Electron device letters, 1986, EDL-7 (01): : 32 - 34
- [4] AN NPN ALGAAS/GAAS COLLECTOR-UP HBT WITH AN H+-IMPLANTED HIGH-RESISTIVITY LAYER UNDER THE EXTERNAL PARA+-GAAS BASE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2174 - L2176
- [5] Collector breakdown voltage and RF performance of GaAs, InGaAs and InP collector HBT's PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 872 - 877
- [9] Polycrystal isolation of InGaP/GaAs HBT's to reduce collector capacitance IEEE Electron Device Lett, 2 (47-49):
- [10] Transient analysis of collector current collapse in multifinger HBT's IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08): : 272 - 274