Calculated density of states and carrier concentration in 4H- and 6H-SiC

被引:0
|
作者
Persson, C. [1 ]
Lindefelt, U. [1 ]
机构
[1] Linkoping Univ, Linkoping, Sweden
来源
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
7
引用
下载
收藏
页码:275 / 278
相关论文
共 50 条
  • [31] Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy
    Giannazzo, F
    Musumeci, P
    Calcagno, L
    Makhtari, A
    Raineri, V
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 195 - 199
  • [32] Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy
    Achtziger, N
    Forkel-Wirth, D
    Grillenberger, J
    Licht, T
    Witthuhn, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 756 - 762
  • [33] Changes in the exciton-related photoluminescence of 4H- and 6H-SiC induced by uniaxial stress
    Ivanov, I.G.
    Lindefelt, U.
    Henry, A.
    Egilsson, T.
    Kordina, O.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 489 - 492
  • [34] EPR and ab initio calculation study on the EI4 center in 4H- and 6H-SiC
    Carlsson, P.
    Son, N. T.
    Gali, A.
    Isoya, J.
    Morishita, N.
    Ohshima, T.
    Magnusson, B.
    Janzen, E.
    PHYSICAL REVIEW B, 2010, 82 (23)
  • [35] Bandstructure and transport properties of 4H- and 6H-SiC: Optically detected cyclotron resonance investigations
    Meyer, B.K.
    Hofmann, D.M.
    Volm, D.
    Chen, W.M.
    Son, N.T.
    Janzén, E.
    Materials Science Forum, 2000, 338
  • [36] 4H- and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
    Wahab, Q. (hajime-k@matsunami.kuee.kyoto-u.ac.jp), 1600, (Trans Tech Publications Ltd): : 389 - 393
  • [37] Changes in the exciton-related photoluminescence of 4H- and 6H-SiC induced by uniaxial stress
    Ivanov, IG
    Lindefelt, U
    Henry, A
    Egilsson, T
    Kordina, O
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 489 - 492
  • [38] EPR study of single silicon vacancy-related defects in 4H- And 6H-SiC
    Mizuochi, N.
    Isoya, J.
    Yamasaki, S.
    Takizawa, H.
    Morishita, N.
    Ohshima, T.
    Itoh, H.
    Materials Science Forum, 2002, 389-393 (01) : 497 - 500
  • [39] Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC
    van Duijn-Arnold, A
    Mol, J
    Verberk, R
    Schmidt, J
    Mokhov, EN
    Baranov, PG
    PHYSICAL REVIEW B, 1999, 60 (23) : 15829 - 15847
  • [40] Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC
    Iwata, Hisaomi
    Itoh, Kohei M.
    Materials Science Forum, 2000, 338