Thermal stability characterization of doped layers and heterostructures grown by Si-molecular beam epitaxy

被引：0
|
作者：
机构：
[1] Sardela, Mauro R.Jr
[2] Radamson, Homayon H.
[3] Ni, Wei-Xin
[4] Sundgren, Jan-Eric
[5] Hansson, Goran V.
来源：
Sardela, Mauro R.Jr | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Silicon compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy
    Fedoryshyn, Y.
    Beck, M.
    Kaspar, P.
    Jaeckel, H.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
  • [32] Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
    Zhang, DH
    Wang, XZ
    Zheng, HQ
    Yoon, SF
    Kam, CH
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 14 - 19
  • [33] THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    NISHIKAWA, Y
    ISHIKAWA, M
    PARBROOK, PJ
    ONOMURA, M
    SAITO, S
    HATAKOSHI, GI
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 807 - 811
  • [34] Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy
    Antonell, MJ
    Abernathy, CR
    Krishnamoorthy, V
    Gedridge, RW
    Haynes, TE
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (11) : 1283 - 1286
  • [35] Thermal stability of beryllium atoms in Be δ-doped GaAs grown on GaAs(111)A by molecular beam epitaxy
    Hirai, M.
    Ohnishi, H.
    Fujita, K.
    Watanabe, T.
    Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (6 B):
  • [36] THERMAL-STABILITY OF ACCEPTOR SI IN DELTA-DOPED GAAS GROWN ON GAAS(111)A BY MOLECULAR-BEAM EPITAXY
    HIRAI, M
    OHNISHI, H
    FUJITA, K
    WATANABE, T
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 339 - 344
  • [37] Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 A (6583-6586):
  • [38] Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
    Ichiryu, D
    Sano, E
    Horikoshi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6583 - 6586
  • [39] Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy
    M. J. Antonell
    C. R. Abernathy
    V. Krishnamoorthy
    R. W. Gedridge
    T. E. Haynes
    Journal of Electronic Materials, 1997, 26 : 1283 - 1286
  • [40] Exciton luminescence in Si1-xGex/Si heterostructures grown by molecular beam epitaxy
    Rowell, N.L.
    Noel, J.-P.
    Houghton, D.C.
    Wang, A.
    Lenchyshyn, L.C.
    Thewalt, M.L.W.
    Perovic, D.D.
    Journal of Applied Physics, 1993, 74 (04): : 2790 - 2805
12345