Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy

The thermal stability of tellurium in InP has been examined in samples doped with Te up to an electron concentration of 1.4 x 10(20) cm(-3). Annealing was conducted using rapid thermal annealing for a period of one minute at temperatures over the range 650-800 degrees C. Secondary ion mass spectroscopy analysis showed virtually no change in the Te profile before and after annealing, even at the highest annealing temperatures. High resolution x-ray diffraction and Hall measurements revealed a general decrease in the lattice strain and carrier concentration for annealing temperatures above 650 degrees C. No evidence of strain relief was found in the form of cross-hatching or through the formation of a dislocation network as examined by scanning electronmicroscopy or transmission electron microscopy (TEM). These results are most likely due to the formation of Te clusters, though such clusters could not be seen by cross-sectional TEM.